晶体二极管的分类一、根据构造分类半导体二极管主要是依靠pn结而工作的（Classification of crystal diodes classification of semiconductor diodes according to their configuration, mainly relying on PN junctions）.docVIP

晶体二极管的分类一、根据构造分类半导体二极管主要是依靠pn结而工作的（Classification of crystal diodes classification of semiconductor diodes according to their configuration, mainly relying on PN junctions） Classification of crystal diodes Classification according to structure Semiconductor diodes work mainly on PN junctions. An inseparable point contact type and Schottky type with PN junction are also included in the general diode range. Including these two models, according to the features of the PN structure, the crystal diodes are classified as follows: 1, point contact diode A point contact diode is formed by pressing a metal needle on a single sheet of germanium or silicon material and by means of an electric current. Therefore, the PN junction has small electrostatic capacity and is suitable for high frequency circuits. However, compared with the junction type, the point contact diode has poor forward and reverse characteristics, so it can not be used for high current and rectification. Because the construction is simple, so the price is cheap. For small signal detection, rectification, modulation, mixing and limiting, it is a wide range of applications. 2, button type diode The bonding diode is formed by fusing silver or silver filaments on a single crystal of germanium or silicon. Its characteristic is between point contact type diode and alloy type diode. Compared with the point contact type, although the junction capacity of the junction diode is slightly increased, the forward characteristic is particularly good. Often used as a switch, and sometimes also used for detection and power rectification (not greater than 50mA). In the bond type diode, welding wire of the diode is sometimes called gold bonding, welding silver diode is sometimes called the silver bond type. 3 、 alloy type diode Formed on the N type germanium or silicon single crystal by making the PN junction by alloy, indium, aluminum and other metals. The forward voltage drop is small and suitable for high current rectificatio