deposition and characterization of cvd-grown ge-sb thin film device for phase-change memory application沉积和表征cvd-grown ge-sb薄膜设备相变内存的应用程序.pdfVIP

Hindawi Publishing Corporation Advances in OptoElectronics Volume 2012, Article ID 840348, 7 pages doi:10.1155/2012/840348 Research Article Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application C. C. Huang, B. Gholipour, K. Knight, J. Y. Ou, and D. W. Hewak Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK Correspondence should be addressed to C. C. Huang, cch@orc.soton.ac.uk Received 15 November 2011; Accepted 5 January 2012 Academic Editor: R