alngan-based mos-hemt technology processing and device resultsalngan-based mos-hemt技术处理和设备的结果.pdfVIP

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2011, Article ID 821305, 7 pages doi:10.1155/2011/821305 Research Article AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results S. Taking, D. MacFarlane, and E. Wasige High Frequency Electronics Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK Correspondence should be addressed to S. Taking, sanna@elec.gla.ac.uk Received 1 October 2010; Accepted 6 December 2010 Academic Editor: David Moran Copyright © 20