current mechanism in -gated metal-oxide-semiconductor devices目前的机制在封闭的金属氧化物半导体设备.pdfVIP

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current mechanism in -gated metal-oxide-semiconductor devices目前的机制在封闭的金属氧化物半导体设备.pdf

current mechanism in -gated metal-oxide-semiconductor devices目前的机制在封闭的金属氧化物半导体设备

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2012, Article ID 858350, 7 pages doi:10.1155/2012/858350 Research Article Current Mechanism in HfO2-Gated Metal-Oxide-Semiconductor Devices Osman Pakma Department of Physics, Faculty of Sciences and Arts, Batman University, 72000 Batman, Turkey Correspondence should be addressed to Osman Pakma, osman@ Received 9 January 2012; Revised 27 March 2012; Accepted 10 April 2012 Academic Editor: Xie Quan Copyright © 2012 Osman Pakma. This is an open

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