from 1 sun to 10 suns c-si cells by optimizing metal grid, metal resistance, and junction depth太阳从1到10个太阳同单晶硅电池通过优化金属网格,金属电阻,连接深度.pdfVIP

Hindawi Publishing Corporation International Journal of Photoenergy Volume 2009, Article ID 827402, 11 pages doi:10.1155/2009/827402 Research Article From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth Vikrant A. Chaudhari and Chetan S. Solanki Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai Mumbai 400076, India Correspondence should be addressed to Vikrant A. Chaudhari, vikrant.c@iitb.ac.in Received 6 March 2009; Accepted 21 July 2009 Recomme