cz硅晶生长理论（CZ growth theory of silicon）.docVIP

cz硅晶生长理论（CZ growth theory of silicon） 1. Crystal growth design by CZ method The components of the CZ furnace can be divided into 4 parts: (1) furnace body: including quartz pot, graphite three valve pot, heater, heat insulation element, Furnace wall. (2) crystal and crucible pulled carried on rotating machinery including seed card head, hanging steel Pull up the rotating elements. (3) gas pressure control: including gas flow control, vacuum system, pressure Control valve. (4) control system: including detection sensor, computer control. But according to our argument can be considered to be ripe: (1) furnace body: including the motor that controls the lifting and rotation of the crystal The limit position of crystal lifting), auxiliary furnace chamber (steel rope, hammer), Isolation board, main furnace chamber (reverse flow barrel, big cover plate, upper heat preservation cover, main protection) Temperature cap, heater, three pan, tray, holder, six angle outer thread stone Ink screw, internal thread, graphite screw, quartz cover, electrode, chassis), Transmission machinery (under the chassis). (2) electric cabinet (heating, vacuum, ball valve, temperature controller, computer, computer) Fans, vacuum gauges, switches, touch screens, hydraulic switches, and all kinds of Electrical appliance, electronic component). (3) electric control machine (downstairs) Density of monocrystalline silicon Solid density 2.33 g /cm3 Liquid density 2.5 g /cm3 Driving force of solidification and crystallization In the process of solution growth, as the solution temperature drops, The phase change of a liquid state into a solid. Why does the drop in temperature cause phase change? Generation? We can usually explain this problem from a thermodynamic point of view. Yes The relative stability of different phases can be determined by the occurrence of isothermal and isobaric phase changes The free energy (G) is used to decide. G = S * HT G: free energy H: enthalpy T: absolute temperature S: Ch