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Consideration on IGBT Module Lifetime for (考虑对IGBT模块寿命).pdf

Consideration on IGBT Module Lifetime for (考虑对IGBT模块寿命).pdf

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Consideration on IGBT Module Lifetime for (考虑对IGBT模块寿命)

Consideration on IGBT Module Lifetime for Electrical Vehicle (EV) Applications Hui Han, Mitsubishi Electric Electronics (Shanghai) Co., Ltd. Shanghai, China Hanhui@ Gaosheng Song, Mitsubishi Electric Electronics (Shanghai) Co., Ltd. Shanghai, China, SongGS@. Abstract Considering the effects of start and stop, acceleration and deceleration, motor outputs maximum torque at low speed and uphill or motor yields minimum torque at maximum speed on IGBT life, an analysis of IGBT power cycling and thermal cycling capability is made in this paper. It can be summarized that traditional industrial module has the potential risk of life expiration in electric vehicles. EV IGBT T-PM (Transfer-molded Power Module) which focuses on improving power cycling capability and thermal cycling capability can completely satisfy the life requirement of electric vehicle. It provides a reference for the EV inverter design engineers to choose the appropriate IGBT module. 1 Introduction Energy-saving and environment-protection by adopting EVs has become important development trend for major automobile companies, and many countries have realized the sustainable development of automobile industry. Inverter is one of the most important parts for EV system, and the harsh application conditions such as higher running temperature and frequent start and stop have higher requirements on inverter reliability especially the core components IGBT reliability. Lifetime is one of the important factors of IGBT reliability and mainly decided by the IGBT power cycling and thermal cycling capability. The start and stop, acceleration and deceleration, motor outputs maximum torque at low speed and uphill or motor yields minimum torque at maximum speed of EV, correspondingly junction temperature fluctuation, when the IGBT module temperature is changing. Repetitive junction temperature fluctuation of IGBT will cause thermal stress between Al wires and power chip bonded surface, whi

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