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Steady state and transient Brillouin gain in (稳态和瞬态布里渊增益)
International Journal of Scientific and Research Publications, Volume 5, Issue 9, September 2015 1
ISSN 2250-3153
Steady state and transient Brillouin gain in narrow
band-gap magnetized semiconductors
* **
V. Pal Singh , M. Singh
*
Department of Physics, Singhania University, Pacheri Bari, Jhunjhunu - 333515, India
**
Department of Physics, Amity University, Sector-125, Noida-201301 (U.P.), India
Abstract : Using the hydrodynamic model of semiconductor the medium can keep in memory the light induced
plasmas, a detailed analytical investigation is made to study coherence for some time after the switching off of the
both the steady-state and the transient Brillouin gain in narrow excited pulse.
band gap magnetized one-component centrosymmetric Out of the several NLO effects, the nonlinear scattering of
semiconductor viz. n-InSb under off-resonant laser irradiation. laser radiation in gaseous and solid state plasmas aroused a
Using the fact that origin of stimulated Brillouin scattering great deal of interest in the past few years [ 1-5] on account
(SBS) lies in the third-order (Brillouin) susceptibility ( χ(3) ) of of the fact that the absorption of laser radiation in plasma
B
the medium, we obtained an expression of the threshold pump grea
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