强介电PbZrTiO3薄膜之磁控溅镀制备及特性分析-National.PDF

國立臺灣大學 「台大工程」學刊 第八十二期 民國九十年六月 第 41–48 頁 41 Bulletin of the College of Engineering, N.T.U., No. 82, June 2001, pp. 41–48 強介電Pb(Zr, Ti)O3 薄膜之磁控濺鍍製備及特性分析 RADIO-FREQUENCY MAGNETRON SPUTTERING AND PROPERTIES OF FERROELECTRIC 孫 裕 昌* 陳 嘉 峰* 呂 宗 昕† Yu-Chang Sun Chia-Feng Chen Chung-Hsin Lu Pb(Zr, Ti)O THIN FILM 3 *研究生 †教授 國立台灣大學化學工程學系 *Graduate student †Professor Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan 10617, R.O.C. Abstract Ferroelectric thin films have been widely expected for nonvolatile ferroelectric random access memory (FeRAM) application. The deposition processes of Pb(Zr,Ti)O3 摘 要 (PZT) thin films have been developed by using RF-magnetron sputtering method. The crystallization 本研究乃藉由控制磁控濺鍍法之濺鍍壓力與靶材化學 behavior and the quality of thin films were closely related 成份比例，以得到具有優良鐵電特性並可適用於強介電隨 to the sputtering pressure and the PbO content in the target. In this study, the characteristic of the thin films properties 機存取記憶體 (Ferroelectric Random Access Memory) 之鈣 were analyzed by varying the sputtering pressure and the 鈦礦相Pb(Zr, Ti)O3 薄膜。研究實驗中探討靶材中鉛含量及 excess PbO content in the target. By adjusting the 濺鍍壓力對薄膜特性的影響。實驗結果顯示，靶材中鉛過 sputtering