专业英语三讲.ppt

Physics of Semiconductor Devices (双语) 李聪 Email:cong.li@mail.xidian.edu.cn Tel:801 Add: 老校区新科技楼503室 作业 The intrinsic semiconductor may be an interesting material, but the real power of semiconductors is realized by adding small, controlled amounts of specific dopant, or impurity, atoms. The doped semiconductor, called an extrinsic material, is the primary reason we can fabricate the various semiconductor devices. Interesting：有趣的，令人感兴趣的 Power：能量，作用，功能，威力… Controlled：可控地，控制地 Specific：特定的，特殊的 Dopant：掺杂（物） Impurity：杂质 Extrinsic：非本征的，非固有的 Fabrication：制造 Device：器件 Figure 4.3 shows three basic bond representations of a semiconductor. Figure 4.3a shows intrinsic silicon, which is very pure and contains a negligibly small amount of impurities. Each silicon atom shares its four valence electrons with the four neighboring atoms, forming four covalent bonds. Figure 4.3b shows an n-type silicon, where a substitutional phosphorous atom with five valence electrons has replaced a silicon atom, and a negative-charged electron is donated to the lattice in the conduction band. The phosphorous atom is called a donor. valence electrons：价电子 covalent bonds：共价键 substitutional phosphorous atom：替位磷原子 negative-charged：带负电的 Lattice：晶格 conduction band：导带 Valence band：价带 Donor：施主 The intrinsic carrier concentration for silicon at T = 300 K may be calculated by using the effective density of states function values from Table 4.1. The value of ni calculated from Equation (4.8) for Eg = 1.12 eV is ni = 6.95 × 109 cm-3. The commonly accepted value of ni for silicon at T = 300 K is approximately 1.5 × 1010 cm-3. This discrepancy may arise from several sources. First, the values of the effective masses are determined at a low temperature. Since the effective mass is an experimentally determined parameter, and since the effective mass is a measure of how well a particle moves in a crystal, this parameter may be a slight function of temperature. Next, the density of states function for a semi