江西师范大学电磁学研究专题论文翻译作业(英).docxVIP

Dynamic nuclear polarization induced by hot electronsABSTRACTA method for local dynamic nuclear polarization is demonstrated in a GaAs/AlGaAs heterostructure at the Landau level filling factor ν=3. Using a narrow channel sample, where the width varies stepwise along the electron flow, the authors find that electron cooling (heating) causes the polarization of nuclear spins against (toward) the external magnetic field at liquid helium temperatures. The longitudinal nuclear spinrelaxation rate varies exponentially with inverse temperature.Recently, nuclear spins in semiconductors have attracted great attention due to the possible application for quantum information technology.?/content/aip/journal/apl/90/3/10.1063/15?While the nuclear Zeeman energy is extremely small even in the strong magnetic field and the polarization is negligible in thermal equilibrium, the nuclear spins can be dynamically polarized using the electron-nucleus flip-flop process arising from the contact hyperfine interaction. The Hamiltonian isAI?S=A2[I+S?+I?S+]+AIzSz,(1)?where?A?(0)?is the hyperfine constant, and?I?and?S?are the nuclear spin and electron spin, respectively. For GaAs, the effective electron?g?factor?(g=?0.44)?has the opposite sign to that of the free electron?g?factor?(g=+2.00)?and the magnetic moment of electrons is parallel to the spin angular momentum as well as those of the lattice nuclei. Electron spin resonance (ESR) measurements have shown that the relaxation of electron spin polarization via the first term causes the nuclear polarization and a shift of the ESR line (Overhauser shift) due to the second term.?/content/aip/journal/apl/90/3/10.1063/17For local manipulation of dynamic nuclear polarization (DNP), electrical methods of inducing electron spin flip are desirable. Previous works concerning the current-driven DNP can be classified into two categories: DNP induced by electron tunneling between spin-resolved edge channels in the integer quantum Hall