功能材料2:基础1.ppt

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功能材料2:基础1

半导体(pn结)发光原理: 通过正偏压使pn结处达到例子数反转 半导体激光器结构:共振 Osillation chamber for a semiconductor laser Schematic sketch of the output of a laser diode as a function of drive current. The thresholds for laser operation and for catastrophic optical damage are indicated. 半导体激光器LD与发光二极管(LED) LD LED Now let us consider the functions of the different layers of semiconductor materials, as illustrated in Figures 9 and 10. The heavily doped layers are electrically conducting, facilitating making the electrical contacts. The sequence of layers AlGaAs-GaAs-AlGaAs forms what is called a double heterostructure, in which there are two changes of composition of the material as one goes through the active light-emitting region. (38) To understand the function of the double heterostructure, let us first consider the earliest devices, as illustrated in Figure 2, in which the junction was formed by a junction between p- and n-type GaAs. This was a material with a single composition; the junction was called a homojunction (also called a homostructure). Figure 11 shows a homojunction structure and how the index of refraction of the material changed as one went through it. It was called a homojunction because the material on each side of the junction had the same composition. The variation in doping provided a small step in the index of refraction, as indicated on the right side of the figure. This tended to provide some confinement of light in the region of the junction, because of total internal reflection. However, the step in the index of refraction was small and the confinement was relatively poor. The losses due to spreading of light out of the active region were large, so that the drive currents had to be large, and these devices were short-lived and subject to damage. Homojunction diode lasers are now extinct. More Information 半导体激光器的量子阱结构 半导体激光器的量子阱结构 Structure and index of refraction for various types of junction in the aluminum gallium arsenide system. Top: Homojunction. Middle: Single

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