ITO导电薄膜沉积之介绍.pptVIP

ITO導電薄膜沉積之介紹;Outline;利用sputtering （濺鍍法） ，於塑膠基板上沉積ITO薄膜，以在室內溫度下沉積，並找出沉積ITO的製程最佳參數。 於ITO和p –Si接合處， ITO經過熱處理後，分析其電阻率、遷移率、光穿透率、C-V和I-V的特性。;Characteristics of indium–tin oxide thin films grown on flexible plastic substrates at room temperature L.M. Wang, Ying-Jaw Chen, Jyh-Wei Liao;Fig. 1. The θ–2θ X-ray diffraction spectra of the PES substrate and the ITO films grown with various DC-sputtering powers. The inset shows the AFM image of the surface for the film deposited during a sputtering atmosphere of 2.0 mTorr with a sputtering power of 300 W.;Fig. 2. The peak intensity ratio of (2 2 2)/all versus the sputtering power deposition pressure, the sputtering-power and (d) depositionpressure-dependences of resistivity ρ, the carrier concentration n versus the sputtering power and deposition pressure, and (g) the sputteringpower and (h) deposition-pressure dependences of transmittance.;Fig. 3. The high-resolution cross-sectional SEM images of ITO films grown with sputtering power (a) 100W and (b) 150W.;Fig. 4. A plot of resistivity versus ratio of peak intensity of (2 2 2) orientation to all orientations.;Conclusion;Effect of heat treatment on ITO film properties and ITO/p-Si interface;Fig. 1. X-ray diffractograms of the ITO film with a thickness of 300 nm grown on p-Si(1 0 0) substrate and annealed at different temperatures in air.;Fig. 2. Resistivity of the ITO films of thickness 300 nm as a function of annealing temperature.;Fig. 3. Carrier concentration and mobility of the 300 nm thick ITO film versus annealing temperature.;Fig. 4. Optical transmittance spectra of the ITO films with a thickness of 300 nm grown on glass and annealed at different temperatures.;Fig. 5. (a) I–V characteristics of ITO/p-Si junctions after the deposition and annealing at different temperatures in air.;Fig. 5. (b) C–V characteristics of ITO/p-Si junctions after the deposition and annealing at different temperatures in air.;Conclusion;Conclusion;References;[1] S. Ashok, S.J. Fonash,