固体物理导论-1.pptVIP

Introduction to Solid-state Physics固体物理导论 Yu Bai 白煜 Suzhou School for Nano-Science and Nano-Engineering, Xian Jiaotong University 西安交通大学苏州纳米科学与工程技术学院 References 固体物理 Charles Kittel 半导体器件物理 S.M. Sze/ 施敏 Introduction to Solid-state PhysicsLecture 1 10/10/2012 Innovation is not just brilliance from one man Inside a Chip 500nm n: neutron， p: proton Covalent bonding for Si atoms Z = 14: 1s22s22p63s23p2 Basic semiconductor theory Valence band model Energy band model Density of states functions Fermi-Dirac distribution function Intrinsic and extrinsic carrier concentration The following slides are from Professor CHOI WEE KIONGDepartment of Electrical Computer EngineeringNational University of Singapore Valence band model of solids The outmost shell electrons of an atom are valence electrons. Bonding of electrons is based on valence electrons. Frequently, the driving force for bonding is to have 8 (or sometimes 18) electrons for the outmost shell to achieve a complete shell. Covalent bonding for Si atoms Z = 14: 1s22s22p63s23p2 4 valence electrons Sharing of 1 pair of valence electrons between adjacent atoms Valence band model of solids (cont.) Silicon at T = 0 K Silicon at T 0 K Valence band model of solids (cont.) Energy band model of solids Typical energy band versus distance plot at T = 0 Valence band model of Si T = 0K T 0K Band gap of semiconductors Band gap for Si e.g. Eg = 1.115eV at 300K Density of states function Near the bottom of the conduction band (i.e. for electrons) Near the top of the valence band (i.e. for holes) Fermi-Dirac distribution function Probability that an empty state is occupied by an electron Similar to Maxwell-Boltzmann density function Electron Hole Equilibrium carrier concentration where Nc and Nv are the effective density of states in the conduction band and valence bands, respectively. After integration Equilibrium carrier concentration (cont.) Effect of low and high temperature Low temp High temp 恩里科·费