晶闸管的高能脉冲式开关特性.docxVIP

外文原文与译文High-Energy Pulse-Switching Characteristics of Thyristors AbstractExperiments were conducted to study the high energy, high dildt pulse-switching characteristics of SCRs with and without the amplifying gate. High dildt. high-energy single- shot experiments were first done. Devices without the amplifying gate performed much better than the devices with the amplifying gate. A physical model is presented to describe the role of the amplifying gate in the turn-on process, thereby explaining the differences in the switching characteristics. The turn-on area for the failure of the devices was theoretically estimated and correlated with observations. This allowed calculation of the current density required for failure. Since the failure of these devices under high dildt conditions was thermal in nature, a simulation using a finite-element method was performed to estimate the temperature rise in the devices. The results from this simulation showed that the temperature rise was significantly higher in the devices with the amplifying gate than in the devices without the amplifying gate. From these results, the safe operating frequencies for all the devices under high dildt conditions was estimated. These estimates were confirmed by experimentally stressing the devices under high di/dt repetitive operation. I. INTRODUCTION Recent innovations in semiconductor device designs and advances in manufacturing technologies have helped evolve high-power thyristors. These devices are designed to operate in a continuous mode for applications such as ac- to-dc power conversion and motor drives. Until recently, their application to high-power pulse switching was mostly unknown. One of the main reasons that has discouraged the use of thyristors for high-speed, high-energy switching is their low dildt rating. The limiting value of the dildt before damage occurs is related to the size of the initial turn-on area and the spreading velocity [I]. Recent experimental results presented in [