MCVD工艺制备光纤(制造工艺).pptVIP

MCVD工艺关键技术 光纤的四大制造技术 VAD（轴向汽相沉积） OVD （外部汽相沉积） MCVD（改进的化学汽相沉积） PCVD（等离子体化学汽相沉积） MCVD工艺简介 MCVD工艺步骤1——Recipe Development Main variables for each process steps are following: Gas flows: bubbler carrier gas, O2, He, Cl2, SF6 etc. Preform temperature Carriage speed Sootbox pressure Ramping of relevant parameters MCVD工艺步骤2——Tube preparation Typical MCVD production tube is constructed from three quartz tubes, which are welded together prior to MCVD process. inlet tube: low quality quartz substrate tube: high quality synthetic silica, forms final preform exhaust tube: low quality quartz sleeving tube: synthetic silica MCVD工艺步骤3——Fire Polishing/Etching Purpose: To clean tube outer and inner surface to improve preform quality. Temperature: 1850-2200C Reactant flows: O2 + fluorine source for etching MCVD工艺步骤4——Cladding and core deposition Cladding deposition Purpose: deposition of protection barrier for core. Temperature: 1900-2100oC Typical reactant flows: SiCl4, POCl3, O2, He Core deposition Purpose: deposition of refractive index difference Temperature: 1900-2200oC Typical reactant flows: SiCl4, GeCl4, O2, He MCVD工艺反应机理 热泳效应 MCVD工艺步骤5——Collapsing Purpose: to produce glass rod for jacketing and fiber drawing Typically 2 to 5 forward and 1 backward steps Temperature: 2000-2400oC Chlorine used as a drying agent MCVD工艺步骤5—— Preform analysis dimensional and optical parameter evaluation. important process and quality control tool More preform analysis MCVD工艺步骤6—— Rod in tube sleeving Purpose: enlarge preform size to improve MCVD productivity Typical final preform size: 40 to 80 mm Temperature: 2000C Vacuum suction between rod and tube to accelerate joining process MCVD设备系统主要组成 SGC MCVD Gas Control and supply System Gas Station Extract Systems Gas scrubber——Jet stream tank Gas scrubber—— Neutralization tank The washed gas from stage 1 is directed to the stage 2 through a set of dampers and mist eliminator (chevron type). pH of stage 2