一种新的部分耗尽SOI器件BTS结构.pdf

28 4 V o l. 28 No. 4 2005 12 Chinese J our nal of Elect ron Devices Dec. 2005 Novel BTS Structure Technology for Partially Depleted SOI MOSFET - , - LI Rui z hen HA N Zheng sheng ( Institute of M icroelectronics of Chinese A cademy of Sciences, Beij ing 100029, China : . Abstract A novel body cont act t echnique fo r part ially deplet ed SOI M OSFET is proposed T his met ho d can suppress f loat ing body eff ect of SOI M OSF ET m ore ef f ect iv ely com pared w it h ot her m et hods . A heav y P+ im plant in source region is perf orm ed befo re poly -silicon gat e deposit . T hen t he asy mmet ric str uct ure w ith shallow so ur ce is f orm ed . When gro w ing sil icide elect ro de, t he thick silicide can punch t hrough t he . - shallow source and for m Ohm cont act w it h bo dy below t hat has hig h dopant co ncent ratio n T w o dim ension device sim ulat ion indicat es t his st ruct ure can depress t he body pot ent ial in str ong inversion r eg io n. T hen t he flo at ing body ef fect is depressed. eywords: SOI; flo at ing bo dy ef f ect ; bo dy co nt act EEACC: 2570D SOI BTS 李瑞贞, 韩郑生 ( , 100029 , , : SO I SO I + , , P , : SOI ; ; : TN386 : A: 1005-9490( 2005 04-0730-03 , SOI , SOI , ,