升级冶金级Si衬底上ECRPECVD沉积多晶Si薄膜.pdfVIP

echnology Column Si ECRPECVD Si 1a, c 1a, c 1b, c 1a, c 1a, c 1a, c, 2 崔洪涛 , 吴爱民 , 秦福文 , 谭毅 , 闻立时 , 姜辛 ( 1大连理工大学, a材料科学与工程学院; b物理与光电工程学院; c三 材料改性 国家重点实验室, 辽宁大连 116024; 2锡根大学 材料工程研究所, 德国锡根57076) : 成功地应用电子回旋共振微波等离子体增强化学气相沉积 (ECRPECVD) 法在升级冶 金级Si 衬 上175 低温条件下沉积了一层优质多晶Si 薄膜研究了压强流量比对多晶Si 薄 膜质量的影响, 并用RamanRHEEDSEMXRD 对薄膜结晶性晶粒大小及显微组织结构进行 了表征发现在恒定气压下, 结晶质量随流量比增大先变好后变差, 即存在最佳流量比, 016Pa 对应105, 而04 Pa 对应1068 : 硅衬 ; 电子回旋共振等离子体增强化学气相沉积; 多晶硅薄膜 : N304055 : A : 1003353X (2008) Preparation of PolySi Film on Upgraded Metallurgical Si Substrate by ECRPECVD 1a, c 1a,c 1b, c 1a,c 1a,c 1a,c,2 Cui Hongtao , Wu Aimin , Qin Fuwen , an Yi , Wen Lishi , Jiang Xin ( 1Dalian University of Technology, a. School of Materials Science Engineering ; b. School of Physics Optoelectronic Technology; c . State Key ab. of Materials Modfi ication of Three Beams, Dalian 116024, China; 2. Institute of Materials Engineering , Siegen University , Siegen 57076, Germany) Abstract: A layer of excellent polySi film was successfully deposited on upgraded metallurgical Si substrate at 175 by ECRPECVD. Effects of the pressure and the flow ratio ( F ) between hydrogen and r silane ( diluted by 95% Ar) on the quality of the film were investigated. he crystallity, the grain size and the crystal structurewere characterized by Raman, RHEED, SEM and XRD. Results show that at a constan