大功率半导体激光器贴片层空洞热效应影响西安炬光科技股份有限公司.pdf

38 9 Vol. 38, No. 9 2011 9 CHINESE JOURNAL OF LASERS Spectember, 2011 大功率半导体激光器贴片层空洞热效应影响 1 2 2 1 2 1 3 2, 3 丁晓尘 张 普 熊玲玲 欧 翔 李小宁 徐忠锋 王警卫 刘兴胜 1 , 710049 2 , 710119 3 , 710119 , / , , , , 808 nm 40 W , , , ; ; / ; ; ; TN248. 4; TN212; TN256 A doi: 10. 3788/ CJL201138.0902006 Thermal Reaction of High Power Semiconductor Laser with Voids in Solder Layer 1 2 2 1 2 Ding Xiaoc en Z ang Pu Xiong Lingling Ou Xiang Li Xiaoning 1 3 2, 3 Xu Z ongfeng Wang Jingwei Liu Xings eng 1 Depart m en t of Applie Physics , Xian Jiaoton g Univer sit y , Xian , Shaan xi 710049, Chin a 2 S tate Key Laboratory of Tran sien t Optics Phot onics , Xian In st itu te of Optics Precision Mechan ics , Chin ese Aca em y of Scien ces , Xian , S haanxi 710119, China 3 Xian Focuslight Optoelectr on ics Technology Co . , Lt . , Xian , Shaan xi 710119, Chin a Abstract Wit t e improvement of power, efficiency, reliability, manufacturability, and cost of ig power semiconductor laser, many new applications are being enabled. Most of t e semiconductor laser bars are packaged wit t eindium solder. However, some small voids are created during t epackaging process, w ic will be gradually enlarged by t e electromigration and electrot ermal migration of t e indium solder. Voids may cause local over eating near t e facets of t e laser. T erefore it is necessar