polyetch培训.pptVIP

POLY/P0LYCIDE 腐蚀工艺简介 CRITICAL DEVICE REQUIRMENTS FOR POLYSILICON ETCHING High selectivity to gate or capacitor dielectric High fidelity mask replication ——CD control ——High selectivity to Photoresist ——No undercutting Profile control ——Anisotropic without cholorocarbon chemistry ——No re-entrance Residue free ——No filaments or residues along topography ——No redeposition Gate oxide integrity Process repeatability POLYSILICON May be doped with Boron (P), or with arsenic or phosphorous (n) Conductive material, resistance varies with dopant level Withstands higher temperatures Stable interface with SiO2 Used as gate electrode in MOS devices Conductors Resistors Ohmic contact to shallow junctions Good for capacitors ISSUES THAT EFFECT POLYSILICON ETCH TOPOGRAPHY Dictates amount of overetch required, which in turn affects profile, CD control and remaining oxide. DOPING LEVEL/DOPING UNIFORMITY Affects etch rate, uniformity, and selectivity. PHOTORESIST PRE-ETCH PROFILE Affects post-etch profile and CD control PERCENT EXPOSED AREA Can result in differences in profile and uniformity. PHOTORESIST PATTERN AT EDGE OF WAFER Strongly affects uniformity of etch rate. POLYSILICON ETCH CRITERIA 1．?? POST-ETCH SIDEWALL 2．?? STRINGERS 3．?? MICROLOADING 4．?? UNIFORMITY 5．?? PROFILE/CD CONTROL 6．?? SELECTIVITY TO OXIDE 7．?? POLYSI：PR SELECTIVITY PROFILE PROFILE DEFNINTIONS Why is profile control important? PROFILE DEFNINTIONS Why is profile control important? Gate etch followed by LDD Spacer: Spacer width control is the lightly-doped drain dopant distribution. If the gate is tapered, the thickness of the spacer at the bottom of the gate changes, therefore changing the LDD region. Salicide ( Self-aligned silicide) applications: If the profile is sloped and the spacer therefore thinned, silicon can diffuse through the thinner areas. This will lead to shorts later in processing. All applications: An undercut or re-entrant profile makes dielectric step coverage