NTZD5110NT5G;中文规格书,Datasheet资料12.pdf

NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm V(BR)DSS RDS(on) MAX ID Max • These are Pb−Free Devices 1.6 @ 10 V 60 310 mA Applications 2.5 @ 4.5 V • Load/Power Switches • Driver Circuits: Relays, Lamps, Displays, Memories, etc. D1 D2 • Battery Management/Battery Operated Systems • Cell Phones, Digital Cameras, PDAs, Pagers, etc. G1 G2 MAXIMUM RATINGS (T = 25°C unless otherwise noted.) J Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V N−Channel Gate−to−Source Voltage VGS ±20 V S1 MOSFET S2 Continuous Drain T = 25°C I 294 mA Steady A D Current (Note 1)