官方说明书AMD Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory.pdf

/file/2593595 From ManualL ManualL collects and classifies the global product instrunction manuals to help users access anytime and anywhere, helping users make better use of products. Home: / Chinese: / This Manual: /file/2593595 FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS High performance Flasherase™ Electrical Bulk Chip-Erase — 70 ns maximum access time — One second typical chip-erase CMOS Low power consumption Flashrite™ Programming — 30 mA maximum active current — 10 µs typical byte-program — 100 µA maximum standby current — Two seconds typical chip program — No data retention power consumption Command register architecture for Compatible with JEDEC-standard byte-wide microprocessor/microcontroller compatible 32-Pin EPROM pinouts write interface — 32-pin PDIP On-chip address and data latches — 32-pin PLCC Advanced CMOS flash memory technology — 32-pin TSOP — Low cost single transistor memory cell 10,000 write/erase cycles minimum Automatic write/erase pulse stop timer Write and erase voltage 12.0 V ±5% Latch-up protected to 100 mA from –1 V to VCC +1 V GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory orga- AMD’s Flash technology reliably stores memory con- nized as 128 Kbytes of 8 bits each. AMD’s Flash mem- tents even after 10,000 erase and program cycles. The