inasgaassb量子点外延生长与光学特性研究-epitaxial growth and optical properties of inasgaassb quantum dots.docx

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2018-05-29 发布于上海
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inasgaassb量子点外延生长与光学特性研究-epitaxial growth and optical properties of inasgaassb quantum dots.docx

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inasgaassb量子点外延生长与光学特性研究-epitaxial growth and optical properties of inasgaassb quantum dots

AbstractInAs/GaAsquantumdotsystemhasbeenstudiedthoroughlyduetoitslasingfrequencylocatedwithinthelow-losswindowofsiliconfibers.CombinedwithGaAsSbsubstrate,InAs/GaAsSbquantumdotmayhavepromisingapplicationsinsolarcellduetothevariabilityoftheenergygapofGaAsSballoyandalsoitsdistinctelectronicstructures.FundamentalsofthegrowthofInAs/GaAsSbquantumdotusingmolecularbeamepitaxywerestudied.GrowthmethodofInAs/GaAs(100)quantumdotwasoptimized.AnintrospectionintotheprocessofgrowthofInAsquantumdotsrevealsthatintroductionoflongergrowthinterruptionrenderedlargerInAsquantumdots,andthusdecreasedthedensityofInAsdots.TheoptimizationofothergrowthparametersshowedthatanappropriateAs/InBEP(beamequivalentpressure)ratio,whichisabout10,cansuppresstheemergenceofgiantincoherentnano-islands,whichimprovestheunityofsizedistribution.Foroptimizedgrowth,highcrystalqualityandmono-modaldistributionofInAsquantumdotswereverifiedbybothsurfaceintrospectionusingAFMandphoto-luminescencetestresults.GaAsSbpreparationutilizingan‘Sb-soak’methodwasstudied.SamplesofGaAs/GaAsSbsuper-latticestructureweregrownundervarioustemperatureandSbflux.AclearX-raydiffractionω/2θprofilesignifiedhighqualityattheinterfaceandgoodperiodicityforoptimizedgrowth.AlowertemperatureorhigherSbfluxduringSb-soakresultedinhigherSbcontentintheGaAsSblayer.Sharpnessofinterfaceandsuperiorityofcrystalqualitywasalsoverifiedbyhighresolutiontransmissioneletronmicroscopyprofile.InAsquantumdotsweregrownonGaAsSbepitaxiallayer.ReflectivehighenergyelectrondiffractionsignalrevealedthatthecriticalthicknessrequiredforinstablegrowthwaslargerthanthatinthecaseofInAs/GaAsquantumdot.ResultsofbothAFMprofileandphoto-luminescencespectrasuggestedthatthedifferentkineticsofgrowthofInAsdotsareattributedtothepresenceofantimonyaggregatedatthegrowthfront.Keywords：MBE,self-assembledquantumdot,antimonide,GaAs/GaAsSbsuper-lattice,interface-II-目录摘要······························································································IAbstract······························