凝聚态光物理学第三章.pptVIP

Interband absorption 3.1 Interband transitions 3.2 The transition rate for direct absorption 3.3 Band edge absorption in direct gap semiconductors 3.4 Band edge absorption in indirect gap semiconductors 3.5 Interband absorption above the band edge 3.6 Measurement of absorption spectra 3.7 Semiconductor photodectors 3 3.1 Interband transition Isolated atom  discrete energy level Solid  band (delocalized state) For semiconductor or insulator, photon excites electron from filled valence to the empty conduction band, the transtion energy is There is a continuous range of frequency; There is a threshold h Eg= (Ef — Ei)min; Creation of an electron-hole pair; Direct and Indirect band gap. 3.1 Interband transition In a direct band material, both the conduction band minimum and the valence band minimum occur at the zone centre where k = 0; In a indirect band gap material, the conduction band minimum does not occur at k = 0, but is usually at the zone edge or close to it. Photon absorption Absorption and emission of phonon 3.2 The transition rate for direct absorption The optical absorption coefficient   Wi - f transition rate, 3.1 Interband transition Where the matrix element M, the density of states g(h). (Fermi’s golden rule) the matrix element M, (semiclassical approach) 3.2 The transition rate for direct absorption The electron state wave function: Perturbation: Dipole moment: Light wave: Initial: Final: the joint density of states This gives: 3.3 Band edge absorption in direct gap semiconductors Electron level in a covalent crystal made from four-valent atom such as Ge or bi- nary compounds such as GaAs. The s And p states of the atoms hybridize to form bonding and antibonding molecular orbitals, which then evolve into the con- duction and valence bands of the semi- conductor 4s24p2 Selection rules: The parity of the initial and final states must be different.  j =