[精选]施敏《半导体器件与物理》习题答案.pdf

Solutions Manual to Accompany SEMICONDUCTOR DEVICES Physics and Technology 2nd Edition S. M. SZE UMC Chair Professor National Chiao Tung University National Nano Device Laboratories Hsinchu, Taiwan John Wiley and Sons, Inc New York. Chicester / Weinheim / Brisband / Singapore / Toronto 1 Contents Ch.1 Introduction 0 Ch.2 Energy Bands and Carrier Concentration 1 Ch.3 Carrier Transport Phenomena 7 Ch.4 p-n Junction 16 Ch.5 Bipolar Transistor and Related Devices 32 Ch.6 MOSFET and Related Devices 48 Ch.7 MESFET and Related Devices 60 Ch.8 Microwave Diode, Quantum-Effect and Hot-Electron Devices 68 Ch.9 Photonic Devices 73 Ch.10 Crystal Growth and Epitaxy 83 Ch.11 Film Formation 92 Ch.12 Lithography and Etching 99 Ch.13 Impurity Doping 105 Ch.14 Integrated Devices 113 0 CHAPTER 2 1. (a) From Fig. 11a, the atom at the center of the cube is surround by four equidistant nearest neighbors that lie at the corners of a tetrahedron. Therefore the distance between nearest neighbors in silicon (a = 5.43 Å) is 2 2 1/2 1/2 [(a/2) + ( 2a /2) ] = 3a /4 = 2.35 Å. (b) For the (100) plane, there are two atoms (one central atom and 4 corner atoms each contributing 1/4 of an atom for a total of two atoms as shown in Fig. 4a) 2 for an area of a , therefore we have 2 -8 2 14 2 2/ a = 2/ (5.43 × 10 ) = 6.78 × 10 atoms / cm