半导体激器光束复合.docVIP

Study on the Beam Multiplexing of Diode Laser Arrays 半导体激光器列阵光束复合技术研究 摘要：文中针对半导体激光器列阵的波长复合和偏振复合技术开展了设计和实验研究。首先利用半导体材料波长易调节的特点，设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构，得到了760nm、800nm、860nm、930nm、976nm五个波长激射的半导体列阵激光器，同时设计了四个短波通滤波片参数，开展了半导体列阵激光器的多波长光束复合技术的实验研究; Abstract: Design and experimental studies on the wavelength multiplexing and polarization composite of diode laser arrays were carried out in this article. First, the structure of AlGaInAs / GaAs / AlGaAs quantum well under compressive strain was used, for semiconductor materials’ characteristic of the wavelength is easy to adjust. As a result, we obtained a semiconductor laser array of five lasing wavelength: 760nm, 800nm, 860nm, 930nm, 976nm. At the same time, parameters of the four shortwave pass filters were designed, and experimental study on the beam multiplexing of diode laser arrays were carried out; 其次利用1/2波片和偏振复合棱镜将两束不同偏振状态的光束进行了复合，并设计了光束聚焦系统。最终实现了5个波长，10条半导体激光器列阵的光束复合，得到了196W的激光功率输出，总体效率为76%，其中，波长复合效率可以达到92.4%，输出聚焦光斑尺寸为144μm×1 330μm，聚焦光功率密度达到1.02×105W/cm2，与单条半导体激光器列阵相比，合束光的光功率密度提高了4.3倍。 Second, two beams of different polarization state were composited using the 1/2 波片 and a polarizing composite prism, after that, the beam focusing system was designed . Ultimately 10 semiconductor laser arrays’ beam of 5 wavelengths were composited, its output power was 196W and the overall efficiency was 76 %, in which the wavelength recombination efficiency could reach 92.4%. The size of the output focus spot was 144μm × 1 330μm, and the power density of the focused light was as high as 1.02 × 105W/cm2. Compared with a single diode laser array, the power density of composite beam was improved 4.3 -fold. 0 引言 大功率半导体激光器由于体积小、电光转换效率高、谱宽窄、波长易于调节等优点，在泵浦固体激光器、光纤激光器上早已有着广泛的应用2]。近年来，随着半导体材料生长技术、高效散热技术的发展，大功率半导体激光器列阵器件的输出功率不断提升，而且微光学制造工艺技术也有了长足的进步，这些技术的成熟使得大功率半导体激光器列阵器件直接应用成为可能。 0 Introduction High-power semiconductor lasers have long been widely used in pumped solid-state lasers and fiber lasers[1] [2] due to their adventage of mall