双频容性耦合等离子体刻蚀工艺的物理基础课件.ppt

VL= 400V，fH=60MHz, VH=200V, d=2cm, p=5mTorr Influence of low-frequency on IEDF * 四、 描述DF-CCP物理过程的混合模型 基本思想： ? 采用流体力学方法描述等离子体的宏观输运过程电场分布； ? 采用Monte-Carlo方法模拟在鞘层中与中性粒子的碰撞过程。 Input parameters: fL, fH,, PL, PH,, D, p Fluid model in sheath: E(x,t), V(x,t), ni(x,t), s(t), Vsh(t) MC method: IEDF, IADF * Electron flux Electron energy flux Electron energy loss Fluid models: Ar plasmas ionization * * E(x,t) ?xj, ?vj Ion positions xj(t) and velocities vj(t) between two contiguous collisions. Please notice: the ion trajectory is a beeline under the action of the electric field. 离子在鞘层中受鞘层电场的运动 * e0 e1 qr 离子在鞘层中与中性粒子的碰撞 ? 弹性碰撞 ? 电荷交换碰撞 * One-dimensional model When the chamber radius R is far larger than the distance d between two electrodes, we can use the 1D model to simulate the discharge, i.e., Rd. x=0 x=d LF HF * Influence of HF-power frequency on plasma density P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, * P=50 mTorr, Vh=50 V, Vl=100V, fh =60 MHz, fl=2,5, 10, 13.56 MHz Influence of LF-power frequency on plasma density * P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, Influence of HF-power frequency on sheath voltage drop 平均鞘层电位降： 与解析模型的比较 * fh = 30MHz, P =50mTorr, Vh = 200V, Vl = 400V fl = 2MHz P = 100mTorr, Vh = 200V, Vl = 400V 离子入射到电极上的能量分布 * HF power LF power H 2R D Schematic diagram of DF-CCP H= 2.45cm 2R=43.18cm D=6.35cm Two-dimensional model * I. Influence of high frequency fH ? averaged electron density: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases significantly as increasing values of fL. * ? averaged electron temperature: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases slightly as increasing values of fL. * II. influence of low frequency 12MHz With the increase of low frequency, two sources become from decoupling to coupling, and the electron density increases