eetop.cn_introduction to flash memory电子书.pdfVIP

Introduction to Flash Memory ROBERTO BEZ, EMILIO CAMERLENGHI, ALBERTO MODELLI, AND ANGELO VISCONTI Invited Paper The most relevant phenomenon of this past decade in the field to allow cell scaling below the 65-nm node is the tunnel oxide of semiconductor memories has been the explosive growth of the thickness reduction, as tunnel thinning is limited by intrinsic and Flash memory market, driven by cellular phones and other types extrinsic mechanisms. of electronic portable equipment (palm top, mobile PC, mp3 audio player, digital