磁性隧道结的隧穿磁电阻研究-凝聚态物理专业论文.docx

机 机 4J 摘要 咽融 R础istance，TMR )随偏压和温度的变化关系，问时还研究了零温时在有限偏压下 隧穿磁电阻 TMR 与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面 J 势盘 U 的变化关系。我们的计算结果较好地解释了有关的实验结果。 关键词z 磁性半导体有机半导体隧穿磁电阻 自旋轨道精合隧穿系数 砸、 砸、1川 l\ Ab Abs仿制 The Theoetical Research about The Tunneling ‘阜 Magnetoresistance in Magnetical Tunnel Junctions Major: Condensed Matter Physics Postgraduate: Zhang Pei-pei Supervisor: Xu Ming 电 \，; Abstract: In由e 21st 例n阳ry，peoples livl制 are being rapidly improved with the development of science and tecbnology. The 也bricated spintronic devices take use of the charge and 伽 spin of electrons t，咄咄即ωω.rry information and store information，which may gradua11y change the wayω 剖ore information. The advan阳ges of spintronic devices wou1d be nonvolatility，阳町eased integration densities，and dωeased elec创c pow衍∞nsumption ∞mp缸ed with ∞nvention a1 magnetic electro姐c devic创. The v时y good application potentia1iti创 have been shown in magnetic reωrd and magnetoresistive random access memo叩( 仪AM). Because of unique prop配6帽， these novel spintronics materia1s，such 拙 ma伊创ic semi∞nductor，organic semiconductl饵 have become one of best candidates for spin polarized 衍m叩ort mat阳ials. It h捕 a si阴ificant effect on the development of spintron邸， understanding 也e physiωof organic semi∞nductorsωstudy spin pol町ized relaxation and tran咽。此 properties in organic 阳时∞nductor materia1s. h也is 伽esis，也e main work and results 缸e 邸 follows: We selected a magn甜c-semiconduc阳翩翩 in阳la阳and inVI刷刷刷 the electronic ù8.tl晤。，11 prol阳阳 in the 伽roma伊eticl食盯omagne出瞒semiconductor/ferroma 伊etic σMlFSIF附 trilayers. The 附ults indicate 阳t the 1吨。 四侃 αm1par协leω 阳t in fen四nagnetic/ml创a1 oxidelfenomagnetic sandwichωn be obtained 面也e FMlFSIFM multrilayers with c佣sideri鸣 the spin fi1阳 effiωin the ma伊甜c semiconductor layer. Moreover，也，e transmissi佣 ωeffici刷刷dTMRωn be tuned by some physica1 paramet俐， 刷ch 嗣仙也ickne饵， R础hba 咿篇咱巾，itω叩ling s伽eng也 and molec时ar field of the magne伽 乱， 乱，十λt IV IV 1叶i川 1叶i川 a呗 semiconductor. our calαdations could provide a wa