硫酸铜填孔的电镀理论.pptVIP

硫酸銅填孔電鍍理論-有機物質成分 電鍍反應 : ( 摘要) 可溶解性陽極 Additive Chemistry Additive Chemistry (Cont.) Additive Chemistry (Cont.) Control of additive content Control of Additive content (Cont.) Additive 濃度對電鍍效率的影響 硫酸銅填孔電鍍 : Leveler dominate V.S no Leveler 系統比較 Mechanism of thin knee Mechanism of viafilling 填孔藥水之成分及功能- 範例介紹 不同電流密度下,Additive , carrier 對電鍍效率的影響 * Organic additives Organic additive species Brightener/accelerator Carrier/suppressor Leveller Suppressor Accelerator Function 1 Reduce the activation energy and increase Cu deposition rate Additive can be monitored by CVS using standard addition method or Hull Cell Function 2 The side chains on the additive molecule has a barrier for Cu+ to deposit onto the surface. The probability to fill in steps and vacancies on the surface increases. Function 3 The coverage of the additive on the surface enhanced nucleation and formation of randomly oriented grains. Allows the formation a microstructure with interlocking of randomly oriented grains. Decomposition of additive on Cu surface, such as anode 2S(-1) + 2e- ? 2S(-2) Cu ? Cu2+ + 2e- Occurred mainly during bath idling Air bubbling during idling can usually solve the by-product formation issue By-product speeds up the Cu deposition at least 20 times A bath dominated by the by-product gives columnar microstructure Level/ Additive 比例主導填孔機制,但分析不易. 鍍層不純物相對較高, N atom. 物性相對較差. 三劑控制相對複雜 電鍍效率相對較差 對流態較不敏感. 對Additive副產物較不敏感. Leveler dominate Carrier suppression 主導填孔機制.對流態較敏感. 需良好的 Air flow 或噴流. 鍍層不純物較低, 擴散反應( 主導填孔)及適量的Additive 控制反應 容易分析控制 No leveler dominate 缺點 優點 Carrier #1 Brightener #1 leveler Carrier #2 Brightener #2 Competitors MicroFill Via Fill deposition mode Brightener Carrier Plating soln. Cu deposit BP Normal Accumulation of BP The figure shows thin knee at a corner of through holes.　 The left side is a normal corner. The right figure is shown the thin knee. Usually, very strong leveler such as dyes is used for viafilling. However, if this strong leveler is used, excess l