基于ca模型的单晶硅各向异性腐蚀微观模拟-测试计量技术及仪器专业论文.docxVIP

大连理工大学硕士学位论文摘 大连理工大学硕士学位论文 摘 要 单晶硅各向异性腐蚀技术是MEMS技术的核心工艺之一，精确地对各向异性腐蚀 的结果进行计算机模拟，对MEMS工艺水平的提高具有重要的意义。 本文在VC环境下，根据3．D动态连续CA算法抽象了硅各向异性腐蚀模型，利用 面向对象编程语言实现了用户对图形的灵活操作，利用OpenGL技术实现了图形的绘制 和腐蚀过程的三维动态显示，建立了硅各向异性腐蚀的三维动态模拟系统，从微观角度 模拟了硅各向异性腐蚀的动态过程。本文首先分别建立了基于静态和动态存储方式单晶 硅各向异性腐蚀微观模拟。通过分析单晶硅结构特点，提出了以硅晶胞为最小处理单位 的设计思想，采用动静态相结合的方式对原子进行存储操作。根据用户输入腐蚀版图尺 寸，系统动态分配二维数组存储原子信息，通过对每个原子信息的分析和判断，完成硅 衬底动态腐蚀模拟。在腐蚀算法中，把硅各向异性腐蚀看作硅原予的移除过程，依据原 子相邻原子和次相邻原子的数目判断原子所在晶面，根据用户输入的各晶面的腐蚀速率 计算原子的生命值，当生命值为0时去除该原子。本系统利用硅晶胞的动态移动描述整 个硅衬底腐蚀模拟的全过程，需要的存储空间小。提高了模拟计算的速度。 利用本文建立的模拟软件，对硅(100)台面凸角腐蚀中存在的切削问题进行较深入的 探讨，设计了三种台面直角结构腐蚀的补偿图形，经实验验证取得了较好的补偿效果， 理论分析和实验结果吻合很好。台面三角形和圆形掩膜图形进行腐蚀实验的腐蚀结果与 计算机模拟结果完全一致，为复杂图形的补偿设计奠定了良好的基础。 关键词：各向异性腐蚀；MEMS；单晶硅；计算机模拟；OpenGL三维技术 基于CA模型单晶硅各向异性腐蚀微观模拟Simulation 基于CA模型单晶硅各向异性腐蚀微观模拟 Simulation ofAnisotropic Etching ofMicro Structure ofCrystal Silicon Based on CA Model Abstract A three·dimension dynamic simulating system for silicon anisotropic etching process has been set up based on the 3-D continuous CA model and VC developing environment in this paper．nle dynamic Orapllic Display of etching process was carried out by OpenGL technique．This system has simulated the anisottopic and microcosmic etching procoss of silicon． 孔e two simulating systems for silicon anisotropic etching process have been set up based on the combined of static and dynamic storage．111e dynamic storage has been selected to store the information ofatoms based on the special structure ofcrystalline silicon．nle unit sell of silicon was the smallest deal wim unit．The two—dimensional was dynamic distributed to storage the information of atom,which measure was decided according to the measllre of silicon model which was input by user．ne etching process is referred to as the removal of atoms．nle atom was classified according to the counts of the neighbor atoms and the next neighbor atoms．nlc atom’s life was reduced by the velocity of some wafer which input by user．If the atom’s life was zero，the atom was removed from this position．B