PSMN070-200P,127;中文规格书,Datasheet资料.pdfVIP

PSMN070-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 14 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC converters Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T ≥25 °C; T ≤ 175 °C - - 200 V DS j j ID drain current Tmb = 25 °C - - 35 A