04-薄膜电子学的应用.pptVIP

FBAR Film Bulk Acoustic Resonator Agilent FBAR双工器实物剖析 ST在ISSCC 2005上发布全球第一款集成FBAR滤波器的WCDMA接收IC，采用GeSi:C BiCMOS工艺，AlN作压电薄膜 三种主流结构的FBAR 空气隙FBAR的制备工艺 表面微机械工艺，需要 CMP 处理 固态装配型FBAR制备工艺 需要制备多层高低阻抗交替的声学层作为布拉格反射层用，且每层厚度需精确控制在四分之一波长 硅反面刻蚀型FBAR制备工艺 Linear Momentum Gauss Law in Piezoelectric Electromechanical Constitutive Eqs. Wave Equation 0 z air air Φ x One-Dimensional FBAR Model Stress and displacement continuous at the boundaries between layers Zero stress on free surfaces Pt AlN Al PM film reflected incident FBAR Impedance from Cascaded ABCD Matrices Stress = Voltage Velocity = Current MBVD model Equivalent Circuit of FBAR Co Rx Lx Cx ZL Unloaded FBAR Loading by Al, Pt, and film fs fp Between fs and fp the crystal is inductive with Lx ideally varying from 0 to ? FBAR传感器原理 AlN Au 敏感薄膜 原理：1. FBAR表面微小的质量变化?微小的频率变化 2. 敏感薄膜对特定的待检测物具有选择性 Au FBAR的传感器的结构 电子鼻 用来检测甲醛、甲苯等有害气体 如：用TiO2做敏感膜检测甲苯； 用聚丙烯酰胺做敏感膜检测甲醛等 传感器阵列 Frequency generator counter An odor source with the known activity of components Sensor array with different receptors A response diagram of sensor array 可一次检测多种不同的气体 压电传感器产品 NDK（日本电波株式会社） 30 MHz 免疫感应系统 QCM(基于石英的压电传感器)双感应器 质量传感器——膜厚监控 主要厂商：Inficon 生物传感器——科学分析仪器 主要厂商：Q-sense Au sensor Metals, oxides SiO2, Al2O3, Ti, Pt, Ag, W, Cu, Cr, Ir, Ta, FeC3, TaN, CeO2, Fe, Zn, ZnO2, Fe2O3, ZnS, FeS, Stainless steel, ..., and custom made Polymers PS, PC, PMMA, PTFE, PE, PP Users can coat with own polymers Hydroxyapatite nanocrystalline, RMS ~2 nm * * * * * Vacuum method- Co-evaporation 1. In, Ga and Se were Co-evaporated at 400 ℃ 2. Cu and Se were co-deposited while the substrate temperature was ramped up to 580 ℃. 3.In, Ga and Se were coevaporated still at 580 ℃，The samples were then cooled in Se atmosphere down to 250 ℃ 3-stage process * CIGS太阳能电池组件结构 缓冲层硫化镉可以用来降低ZnO 与CIGS 间之能带上的不连续(band discontinuity) 。 使用化学水浴沉积法(chemical bath deposition，简称CBD) 成长，可提供CIGS 上表面平整的均匀覆盖。 缓冲层要求高透光率，以便能使入射光顺利进入主吸收层材料被有效的吸收。 Glass / Stainless Steel / Polymer CIGS (1.5~2μm) Mo (0.5~1.5μm)