电子器件-9-BJT-3.pptxVIP

Chapter 7.5: Generalized Biasing;7.5 Generalized biasing;7.5 Generalized biasing;7.5 Generalized biasing;7.5 Generalized biasing;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.1 The coupled-diode model;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.5.2 Charge Control Analysis;7.6 Characteristics of BJT;7.6 Characteristics of BJT;7.6 Characteristics of BJT;7.6 Characteristics of BJT;7.6 Characteristics of BJT;7.6 Characteristics of BJT;7.7 Other important effects;7.7.1 Drift in the Base Region;7.7.1 Drift in the Base Region;7.7.2 Base Narrowing;7.7.2 Base Narrowing;7.7.3 Avalanche Breakdown;7.7.3 Avalanche Breakdown;7.7.3 Avalanche Breakdown;7.7.4 Injection Level; Thermal Effect;7.7.4 Injection Level; Thermal Effect;7.7.4 Injection Level; Thermal Effect;7.7.5 Base Resistance and Emitter Crowding;7.7 Other important effects