Ge-Ga-S玻璃薄膜制备及退火工艺的影响【毕业论文】.doc

- PAGE I - 本科毕业设计 （20 届） Ge-Ga-S玻璃薄膜制备及退火工艺的影响 所在学院 专业班级 通信工程 学生姓名 学号 指导教师 职称 完成日期 年 月 PAGE I 摘　要 【摘要】硫系玻璃具有超高的三阶非线性折射率系数、超快的非线性响应、低的双光子吸收和独特的光敏性等品质，已成为一种新型全光信号处理的理想基质材料。本文首先介绍了硫系玻璃薄膜的研究背景，给出了硫系玻璃薄膜的制备方法，并详细介绍了热蒸发法和磁控溅射法制备光学薄膜的方法。实验通过热蒸发法制备了70%GeS2-30%Ga2S3光学薄膜，并利用不同退火参数对沉积的薄膜进行热处理。之后通过Swanepoel光学常数计算方法获得不同热处理后薄膜的性能表征参数。另外通过分光光度计、光谱型椭偏仪、表面轮廓仪、显微拉曼光谱仪等现代测量方法测试了不同退火环境下获得的Ge-Ga-S玻璃薄膜厚度、折射率、透过光谱、表面粗糙度、内部微观结构等参数，并分别进行比较分析，最终得到Ge-Ga-S玻璃薄膜最佳的退火温度。实验检测结果表明，特定温度环境下退火后的玻璃薄膜较未退火的玻璃薄膜，在物理结构及光学特性皆有所改善。 【关键词】硫系光学薄膜；热蒸发；退火。 Abstract 【ABSTRACT】The high third-order nonlinearity refractive index, ultrafast response time of nonlinear, moderate to low two-photon absorption and unique photosensitive properties make chalcogenide glass films attractive candidates for all-optical signal processing. This thesis first introduced the chalcogenide glass film research background, outline the chalcogenide glass film preparation methods, and focus on the thermal evaporation and the magnetron sputtering method. 70%GeS2- 30%Ga2S3 optical thin film were prepared by thermal evaporation, then using different annealing methods treat these as-deposited films. Some key optical parameters were calculated using the transmission spectra based on Swanepoel’s method. Also using the spectrophotometer, Spectral ellipsometer, surface profiler, microscopic Raman spectrometer and other modern measuring methods tested the optical parameters such as thickness, refractive index, surface roughness, topologic structure in different annealing environment. The optical constants were classified by the annealing temperature. As a result, although different properties to the bulk glass could be obtained in the as-deposited Ge-Ga-S glass film, but after choosing appropriate thermal annealing conditions, the annealed ?lms with closed structure and similar properties to the bulk glass could be demonstrate