电沉积CuS镀液的电化学性能及镀膜相组成.pdfVIP

摇 摇 摇 表面技术 第43卷摇 第4期 ·92 · SURFACE TECHNOLOGY 摇 2014年08月 試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試試 电沉积CuS镀液的电化学性能及镀膜相组成 石璐丹,刘科高,张力,高稳成 (山东建筑大学材料科学与工程学院,济南250101) 摘摇 要: 目的摇 获得结晶好、连续均匀的CuS薄膜。 方法摇 采用电沉积方法制备CuS薄膜,研究络合剂、 硫源及铜硫离子比例对镀液电化学性能的影响,分析不同沉积电位下所得薄膜的相组成。 结果摇 柠檬酸 钠的络合效果最好,EDTA最差;硫代硫酸钠作为硫源时,其还原电位较硫脲为硫源时正,氧化电位较负, 水平距离值较小,更容易实现共沉积;铜硫离子比例为1时,施镀最合适。 沉积电位为-0.8 V 时,薄膜的 XRD 图谱中有氧化亚铜的衍射峰;当沉积电位在-0.9 V 时,生成了Cu S相;沉积电位在-0.9 ~-1.2 V 2 时,生成了目标产物CuS,并且-1.2 V 时的衍射峰强度比较高,结晶良好。 结论摇 最佳沉积条件如下:柠 檬酸钠为络合剂,硫代硫酸钠为硫源,铜硫离子比为1,沉积电位为-1.2 V。 关键词:电沉积;CuS薄膜;镀液性能 中图分类号:TQ153.3摇 摇 摇 文献标识码:A摇 摇 摇 文章编号:1001鄄3660(2014)04鄄0092鄄05 Electrochemical Performance of CuS Plating Solution and Phases of Its Thin Film SHI Lu鄄dan,LIUKe鄄gao,ZHANGLi,GAO Wen鄄cheng (School of Materials Science and Engineering,ShandongJianzhu University,Jinan250101,China) ABSTRACT:Objective To get good crystallization and continuous uniform CuS thin film. Methods The Cus thin film was pre鄄 pared by the method of electrodeposition,so as to investigate the effect of complexing agent,sulfur sources and copper sulfion ion proportion on electrochemical properties of the plating solution,and analyze the phase composition of thin film in different deposi鄄 tion potential. Results The experimental results showed that sodium citrate was the best complexing agent,while EDTA was the worst. When choosing sodiumthiosulfateasthesourceof sulfur,itsreductionpotentialcomparedwiththioureawouldbemoreposi鄄 tive,oxidation potential would be more negative andthehorizontal distancewouldhave smaller values,whichwaseasier to imp