电子器件场效应晶体管(4).pptVIP

6.5 The MOS Field Effect Transistor aluminum 铝 amorphous 无定形的 tungsten 钨 oxynitride 氧氮化物 ferroelectrics 铁电体 tantalum(Ta ) 钽 barium (Ba) 钡 strontium 锶 titanate 钛酸盐 boron (B) 硼 phosphorus (P) 磷 incorporated 合成一体的 zirconium 锆 layout 版图 intercept 截距 To obtain the exact ID, 6.5.2 Transfer Characteristics(转移特性, ID~VG) Effect of longitudinal electric field : Control of Ci: (1) d thickness of gate oxide and field oxide (2) high ?i material : Ta2O5, ZrO2 and ferroelectrics Problem: Consider an n+ polysilicon-SiO2 –Si p-channel device with