lect3-CMOS晶体管原理演示文稿.ppt

* * * * * * * 3: CMOS Transistor Theory CMOS VLSI Design CMOS VLSI Design 4th Ed. Lecture 3: CMOS Transistor Theory 3: CMOS Transistor Theory * Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance 3: CMOS Transistor Theory * Introduction So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current Depends on terminal voltages Derive current-voltage (I-V) relationships Transistor gate, source, drain all have capacitance I = C (DV/Dt) - Dt = (C/I) DV Capacitance and current determine speed 3: CMOS Transistor Theory * MOS Capacitor Gate and body form MOS capacitor Operating modes Accumulation Depletion Inversion 3: CMOS Transistor Theory * Terminal Voltages Mode of operation depends on Vg, Vd, Vs Vgs = Vg – Vs Vgd = Vg – Vd Vds = Vd – Vs = Vgs - Vgd Source and drain are symmetric diffusion terminals By convention, source is terminal at lower voltage Hence Vds ? 0 nMOS body is grounded. First assume source is 0 too. Three regions of operation Cutoff Linear Saturation 3: CMOS Transistor Theory * nMOS Cutoff No channel Ids ≈ 0 3: CMOS Transistor Theory * nMOS Linear Channel forms Current flows from d to s e- from s to d Ids increases with Vds Similar to linear resistor 3: CMOS Transistor Theory * nMOS Saturation Channel pinches off Ids independent of Vds We say current saturates Similar to current source 3: CMOS Transistor Theory * I-V Characteristics In Linear region, Ids depends on How much charge is in the channel? How fast is the charge moving? 3: CMOS Transistor Theory * Channel Charge MOS structure looks like parallel plate capacitor while operating in inversions Gate – oxide – channel Qchannel = CV C = Cg = eoxWL/tox = CoxWL V = Vgc – Vt = (Vgs – Vds/2) – Vt Cox = eox / tox 3: CMOS Transistor Theory * Carrier velocity Charge is carried by e- Electrons are propelled by the lateral electric field between source and drain E = Vds/L Carrier velocity v proporti