激光烧蚀法合成一维纳米线.pptxVIP

A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires激光烧蚀法合成结晶半导体纳米线;摘要：;主要内容;一维纳米材料(纳米线)是在碳纳米管的基础上发展起来的，各种新颖的一维纳米材料相继被发现。一维纳米结构具有的许多独特性能不仅为人们研究材料的电子、光学、输运性质、机械等性能与量子尺度的关系提供了好的物质模型，而且也为纳米结构的合成和组装提供了新的机遇。一维纳米材料的可控制备、性能研究和应用对于促进纳米科技领域的发展有十分重要的作用，有助于发现新的效应，发展新的器件，以至于形成新的产业。 激光烧蚀法是用一束高能激光辐射靶材表面,使其表面迅速加热融化蒸发,随后冷却结晶生长的一种制备材料的方法。;图1.纳米线的生长设备示意图;图2.透射电子显微镜图像;(B) Diffraction contrast TEM image of a Si nanowire; crystalline material (the Si core) appears darker than amorphous material (SiOx sheath) in this imaging mode. Scale bar, 10 nm. (Inset) Convergent beam ED pattern recorded along the [211] zone axis perpendicular to the nanowire growth axis. (C) High-resolution TEM image [Topcon (Topcon Technology, Tokyo, Japan) EM-002B, 200-kV operating voltage] of the crystalline Si core and amorphous SiOx sheath. The (111) planes (black arrows) (spacing, 0.31 nm) are oriented perpendicular to the growth direction (white arrow).;二、VLS生长 VLS生长纳米线（管）中存在着两个过程： 一是气态原子在气液界面不断解离溶入液态催化剂中； 二是过饱和溶质在液固界面以界面能最低的方式不断析出 该过程中气、液和固三相共存，故被称为VLS生长。 ;这种制备技术具有一定的普适性，只要欲制备的材料能与其他组分形成共晶合金，则可根据相图配制作为靶材的合金，然后按相图中的共晶温度调整激光蒸发和凝聚条件，就可获得欲制备材料的纳米线。;图3.Si纳米线生长模型;?;图4.锗纳米线的透射电子显微镜图像;Image of the nanowire exhibiting a roughly spherical nanocluster at its end. The EDX measurements made at the white squares show that the nanocluster (upper square) has a Ge:Fe ratio of 2:1 and that the nanowire (lower square) contains only Ge. Scale bar, 9 nm. Image of an isolated Ge nanowire. The nanowire diameter is 5.0 ± 0.6 nm. Scale bar, 5 nm. High-resolution TEM image of the Ge nanowire region indicated by the open black box in (B). A twin boundary oriented along the vertical direction is located at the center of this image; (111) lattice planes are visible to the left and right of the boundary. Scale bar, 1 nm. The Ge nanowires were produced by ablation (Spectra Physics GCR-16s, 532 nm, 10 Hz, 2-W average power) of a Ge0.9Fe0.1 target. The growth conditions were 820°C and 300-torr Ar flowi