双极晶体管总剂量辐射失效概率TOTALDOSERADIATIONFAILURE.pdf

CNIC-01643 CAEP-0105 双极晶体管总剂量辐射失效概率 TOTAL DOSE RADIATION FAILURE PROBABILITY OF BIPOLAR TRANSISTORS (In Chinese) 中 国 核 情 报 中 心 China Nuclear Information Centre 33 CNIC-01643 CAEP-0105 双极晶体管总剂量辐射失效概率 陈盘训 谢泽元 （中国工程物理研究院电子工程研究所，绵阳，621900 ） 摘 要 对三种双极晶体管3DK9D ，3DG6D 和3DG4C （每种100 只） 作了失效概率 PF 与 γ 总剂量 D 关系的研究。辐射实验表明，用 Weibull 分布可以较好地描述 PF 和 D 的关系。取 hFE(D)/hFE(0) ＝ 80% ，70% ，50%为器件失效判据，实验结果表明，失效分布曲线 取决于失效判据。3DG6D 的PF ～D 曲线由两种斜率的直线组成， 这意味着样品组中存在着不同工艺的器件。失效分布曲线斜率揭示 了器件抗总剂量特性的均匀度，它可以用来作为器件加固工艺的质 量监督。当将PF ～D 直线外推到低PF　区时，有些器件失效概率为 0.1%和0.01% 的失效总剂量仅为几十戈瑞（Gy(Si) ）。 关键词：双极晶体管 总剂量 失效判据 失效概率 34 Total Dose Radiation Failure Probability of Bipolar Transistors (In Chinese) CHEN Panxun XIE Zeyuan (Institute Electronics Engineering, CAEP, Mianyang, 621900) ABSTRACT The failure probability PF related with γ total dose radiation is presented for three bipolar transistor 3DK9D,　3DG6D and 3DG4C. It is shown that the PF～D relation is well depicted by Weibull function. hFE (D)/hFE (0)=80% ，70% and 50% was taken as the failure criteria for transistors. The experimental results have shown that distributing curves depend on failure criteria. The PF～D curves are comprised of two straights with different slopes. It means that there were devices with different technology in the samples. The total dose radiation characteristic is displayed by the failure distributing slope. It is used for quality