应用于大功率mmic开关的algan背势垒gan hemt.pdfVIP

Vol. 36,No. 1 JournalofSemiconductors January2015 GaNHEMT with AlGaN back barrier forhigh powerMMICswitchapplication Ren Chunjiang(任春江) ,Shen Hongchang(沈宏昌),Li Zhonghui(李忠辉), Chen Tangsheng(陈堂胜),Zhang Bin(张斌),and Gao Tao(高涛) NationalKey Laboratory of Monolithic Integrated Circuits and Modules,NanjingElectronDevicesInstitute, Nanjing 210016, China Abstract: 0.25 mGaNHEMTwithAlGaNbackbarrierforhighpow