BONDING OF SILICON TO NONSTANDARDBONDING OF SILICON TO NONSTANDARD硅与非标准规范键合 基质.pdf

BONDING OF SILICON TO NON- STANDARD SUBSTRATES Northern Ireland Semiconductor Research Centre School of Electrical and Electronic Engineering OUTLINE • Non-Standard Substrates – Glass – Sapphire • Bonding of Silicon to Non-Standard Substrates – Anodic Bonding(Glass) – Modified Bonding process(Sapphire) Northern Ireland Semiconductor Research Centre School of Electrical and Electronic Engineering Grind and Polish SOI Grind and Polish to Handle required thickness Active SOI Oxidised handle substrate Active silicon substrate Handle Handle Active RoomTemperature bonding followed by high temperature annealing Northern Ireland Semiconductor Research Centre School of Electrical and Electronic Engineering Non-Standard Substrates Silicon-on-Glass Silicon-on-Sapphire •Flat panel display •Improves thermal and high frequency •Capacitive sensors performance of interconnects •Solar cells compared to SOI. •Radiation Hradness •Micromachining •Better heat dissipation than quartz •Microwave cct applications SOS previously achieved using epitaxial growth -high density of dislocations -high leakage current Northern Ireland Semiconductor Research Centre School of Electrical and Electronic Engineering Silicon-On-Glass • Anodic bonding of silicon