大连理工大学模电五.pptxVIP

Field-effect transistors were invented by Julius Edgar Lilienfeld in 1925 and by Oskar Heil in 1934, but practical devices were not able to be made until 1952 (the JFET). The MOSFET, which largely superseded the JFET and had a more profound effect on electronic development, was first proposed by Dawon Kahng in 1960. The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and relative ease of manufacturing BJTs compared to FETs at the time. ;The FET can be made very small, so high-density VLSI circuits and high-density memories are possible. The FET has led to the 2nd electronics revolution in the 1970s and 1980s, in which the microprocessor has made possible powerful desktop computers and sophisticated hand-held calculators.;The FET is a type of transistor that relies on an electric field（电场） to control the shape（形状） and hence the conductivity（导电性） of a channel（沟道） of one type of charge carrier in a semiconductor material. (VCCS);5.1 MOSFET;5.1.1 结构与符号;5.1.2 工作原理与特性曲线;一、特性曲线 I-V Characteristics;二、工作原理 Operation; 2．沟道变形;1) 截止区（cutoff region）vGS≤VT, iD=0 ; 另：N沟道耗尽型MOSFET;可变 电阻区;① gm ——低频跨导transconductance 反映VGS对ID的控制作用(VCCS) gm=?ID/?VGS?VDS=const (mS) (毫西门子);5.2 JFET;5.2.1 结构与符号;一、工作原理; 1．vGS控制沟道宽窄(vDS=0); +;5.2.3 主要参数;各类场效应管的特性比较表(P237） λ：沟道长度调制参数;;;双极型三极管和场效应型三极管的比较;;各种场效应管的转移特性和输出特性对比 (b)输出特性;作业: P249: 5.1.1，5.1.4 P251: 5.3.4 练习 : P249: 5.1.2 P251: 5.3.5;5.4 FET放大电路; BJT FET;5.4.1 共源放大电路（CS）;(1) 静态分析;(2) 交流分析;(2) 交流分析;分压式偏置电路;(2) AC Analysis; ③ Output resistance;5.4.3 三种组态放大电路比较 BJT-FET;CE / CC / CB CS / CD / CG; *Devices：FET;Circuits：DC and AC analysis for CS and CD circuits;作业： P251: 5.2.9 P254: 5.5.4（multistage amplifier）;（1）在T1 位置上画出合适的FET； （2）若T1的漏极电位VD= 14V，其gm = 3ms，求T1的静态值 ID、VDS、VGS？ （3）若T2的β = 50，VBE = 0.6 V，求T2的静态值IB、IC、VCE？ （4）画出微变