MEM2317S_E2.0微盟原厂规格书.pdf免费

MEM2317 P-Channel MOSFET MEM2317 General Description Features MEM2317SG Series Dual P-channel  -20V/-6A enhancement mode field-effect transistor, R =75mΩ@ V =-10V,I =-6A DS(ON) GS D produced with high cell density DMOS trench R =90mΩ@ V =-4.5V,I =-4A DS(ON) GS D technology, which is especially used to minimiz