SOT23-6封装的8205,8205S芯片规格书8205A6.pdf免费

8205A6 Wuxi PWChip Semi Technology CO., LTD N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The 8205A6 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. FEATURES VDS =