WET工艺介绍[精品].pptxVIP

WET Process Introduction;Purpose of Wet Cleaning Process;Purpose of Wet Cleaning Process;Wet Cleaning (Pre-treatment);Wet Process;Chemicals Involved;Wet bench ; Purpose of Pre-clean is to remove the last unwanted oxide layer and prepare surface free of metallic contaminants and good PC for next oxidation.;;Etching off native oxide leaving hydrophobic Si surface, repels H2O, that is prone to H2O mark As a method to passivate surface, H2O2/SC1/SC2 last is used. ; What is H2O mark?;What is the impact of water mark?;;DIW tank is for rinsing wafer as clean as possible before going into the next chemical tank to prevent cross-contamination or before leaving the hood. DIW can overflow or quick dump rinse (QDR). Overflow is very stable flow of DIW and gives good PC control. It makes use of diffusion and dilution. QDR, on the other hand makes use of extra drag force when DIW dump it is fast at removing acid trace, but since there is more agitation in the tank, it may result in higher PC. Control of the DIW tank and surrounding cleanliness is important. DIW tank overflows at all times with by-pass flow to prevent bacteria. Bacteria will result in PC metallic contamination. ;DIW can be hot or cold - depends on previous and next tanks. Hot Chemical will be followed by Hot DIW/Cold DIW; this is to prevent thermal shock. For high viscosity chemical, HDIW rinse will improve solubility of the chemical, thus improve the diffusion of chemical to bulk of DIW, this improves the rinse efficiency. There is also the DIW Megasonic Tank (overflow or with quick dump rinse). The extra Megasonic power helps particle reduction and improves rinsing efficiency especially for viscous chemical. ;DIW flow-rate. Process Time. Dump Cycle Process Time for each sequence. Megasonic On Sequence.;;SC1 with Megasonic ; The mechanism producing the rough surface is the NH4OH acts as the etchant of the oxide while H2O2 acts as the oxidant: ;Methods of reducing the microroughness can be summar