内容讲义资料半导体微电子学part1 2006 course_process_flow.pptVIP

000 INITIAL OXIDE NITRIDE DEP Initial ox: 450 +/- 50 ?, dry oxidation Oxide strip : Pad ox : 100 +/- 10 ? oxidation at 800oC Nitride : 2000 +/- 150 ? NITRIDE ETCH STI MASK Plasma Etch Nitride/oxide after patterning Plasma resist strip by O2 (PRS) Chemical resist strip (using sulfuric acid) (CRS) STI ETCH STI etch: shallow trench (3.2k? depth) - LAM etcher. Selectivity. Liner Oxide Clean HDP DEPOSITION Liner ox: 250 +/- 20 ?, dry oxidation High Density Plasma Oxide Deposition for Gap Fill 6300 +/- 500? CMP Oxide Etch MASK Oxide