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CMOSWafer FabricationProcessTechnologyContent0.5um CMOS process flow cross section0.18um CMOS process flowcross sectionPCM introductionCMOSCross Section of the Silicon WaferStarting with a silicon waferMagnifying the Cross SectionCMOSn/p-well FormationGrow Thin OxideDeposit ResistDevelop ResistUV ExposureDeposit NitrideEtch NitrideRemove Resistn-well Implantsilicon substratep-welln-wellCMOSn/p-well Formationp-well ImplantRemove OxideRemove NitrideTwin-well Drive-inGrow Oxide (n-well)Remove Drive-In Oxidesilicon substratep-welln-wellsilicon substrateCMOSLOCOS IsolationRemove ResistEtch NitrideDevelop ResistUV ExposureDeposit NitrideGrow Thin OxideDeposit ResistFoxp-welln-wellsilicon substrateCMOSLOCOS IsolationDeposit ResistUV ExposureRemove OxideRemove NitrideGrow Field OxideRemove ResistField Implant BDevelop Resistp-welln-wellsilicon substrateCMOSTransistor FabricationVt ImplantRemove OxideRemove ResistPunchthrough ImplantDevelop ResistUV ExposureDeposit ResistGrow Screen OxideFoxpolySipolySip-welln-wellsilicon substrateCMOSTransistor FabricationEtch PolySiDevelop ResistUV ExposureDeposit ResistPolySi ImplantGrow Gate OxideRemove ResistDeposit PolySiFoxp-welln-wellsilicon substrateCMOSTransistor FabricationDeposit ResistDeposit Thin Oxiden-LDD ImplantDevelop ResistRemove ResistUV ExposurepolySipolySiFoxp-welln-wellsilicon substrateCMOSTransistor FabricationUV ExposureDeposit ResistEtch Spacer OxideDeposit Spacer OxideRemove Resistp-LDD ImplantDevelop ResistpolySipolySiFoxn+n+p-welln-wellsilicon substrateCMOSTransistor FabricationUV ExposureDeposit ResistRemove Resistn+ S/D ImplantDevelop ResistpolySipolySiFoxp+p+p-welln-wellsilicon substrateCMOSTransistor FabricationUV ExposureDeposit ResistRemove Resistp+ S/D ImplantDevelop ResistpolySipolySin+n+FoxBPTEOSp-welln-wellsilicon substrateCMOSContacts InterconnectsUV ExposureRemove ResistDevelop ResistDeposit BPTEOSDeposit ResistContact EtchbackPlanarization EtchbackBPSG ReflowpolySipolySin+n+Foxp+p+Metal 1p-welln-wel
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