基于电镜电子束曝光系统raith全解.pptVIP

λ d Δ Δ n-Si SiO2 S D Gate HfO2 CNT 曝光中的主要操作—对准 1、源漏电极要压在纳米管上 2、栅电极要盖在源漏之间 难点：很多地方不能看！ 对准调节 曝光之前，必须先知道在哪里曝光！ 扫描电镜的坐标 （x,y） 曝光系统定义的坐标 （u,v） 两套坐标的刻度校准 标准样品 基于电镜电子束曝光系统Raith全解 主要内容 扫描电子显微镜介绍 Raith电子束曝光系统 曝光参数 对准操作 XL 30 S FEG(a top performing field emission SEM) Acceleration voltage:200 V ? 30kV Resolution:1.5nm at 10kV, 2.5nm at 1kV Electron spot ~ 1nm, ? Resolution ~ 1nm STEM within SEM!! + CL detector 电子发射枪 电子透镜原理 Electron gun produces beam of monochromatic electrons. First condenser lens forms beam and limits current (coarse knob). Condenser aperture eliminates high-angle electrons. Second condenser lens forms thinner, coherent beam (fine knob ). Objective aperture (usu. user-selectable) further eliminates high-angle electrons from beam. Beam scanned by deflection coils to form image. Final objective lens focuses beam onto specimen. Beam interacts with sample and outgoing electrons are detected. Detector counts electrons at given location and displays intensity. Process repeated until scan is finished (usu. 30 frames/sec). Cathodaluminescence Secondary e– Backscattered e– Incident e– Elastically Scattered e– Inelastically Scattered e– Unscattered e– X-rays Auger e– 电子相互作用 Caused by incident electron passing near sample atom and ionizing an electron (inelastic process). Ionized electron leaves sample with very small kinetic energy (5eV) and is called secondary electron.(Each incident electron can produce several secondary electrons.) Production of secondary electrons is topography related. Only secondaries near surface (10 nm) exit sample. FEWER secondary e– escape MORE secondary e– escape 二次电子的形成 如何生成二次电子像 Secondary electrons are generated by the interaction of the incident electron beam and the sample. The secondary electrons emerge at all angles. These electrons gathered by electrostatically attracting them to the detector. Knowing both the intensity of secondary electrons emitted and po