MMBD4448SDW SOT-363广东奥科半导体.pdf免费

MMBD4448SDW SOT-363 Silicon Epitaxial Planar Switching Diode Fast Switching Diode 6 5 4 1 2 3 1. A1 2. C1 3. AC2 4. A2 5. C2 6. AC1 Simplified outline(SOT-363) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 80 V Average Rectified Forward Current IF(AV) 150 mA Forward Continuous Current IFM 300 mA Non-Repetitive Peak Forward Surge Current (at t = 1 µs) IFSM 0.5 A Power Dissipation Pd 200 mW Junction Temperature Tj 150 OC Storage Temperature Range Tstg - 65 to + 150 OC Characteristics at T =